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| Silicon Schottky Diode LBAT60BT1 High current rectifier Schottky diode with very low VF drop (typ. 0.24 V at IF = 10mA) For power supply applications For clamping and protection in low voltage applications For detection and step-up-conversion SOD323 Maximum Ratings at TA = 25C, unless otherwise specified Parameter Diode reverse voltage Forward current Surge forward current, (t <10ms) Total power dissipation TS < 28C Junction temperature Storage temperature Symbol VR IF IFSM PTOT Tj Tstg Value 10 3 5 1350 150 -55-150 Unit V A mW C Driver Marking LBAT60BT1=5 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter DC Characteristics Reverse current VR = 5 V VR = 8 V VR = 5 V, TA = 80 C VR = 8 V, TA = 80 C Forward voltage IF = 10 mA IF = 100 mA IF = 500 mA IF = 1000 mA AC Characteristics Diode capacitance VR = 5 V, f = 1 MHz Symbol IR - - - - VF 0.2 0.26 0.32 0.36 CT 12 0.24 0.32 0.4 0.48 25 0.3 0.38 0.5 0.6 30 Pf min. Values typ. max. Unit A 5 10 100 410 15 25 800 1500 V LBAT60BT1-1/4 LBAT60BT1 Electrical characteristic curves Forward current IF = (VF) TA = Parameter Reverse current IR = (VR) TA = Parameter Forward current IF = f (TS) Permissible Puls Load RthJS = f (tp) LBAT60BT1-2/4 LBAT60BT1 Permissible Pulse Load IFmax/ IFDC = f(tp) LBAT60BT1-3/4 LBAT60BT1 SOD-323 NOTES: 1.CONTROLLING DIMENSION MILLIME TERS 2.LEAD THICKNESS SPECIFIEDPERL/FDRAWINGWITH SOLDERPLATING LBAT60BT1-4/4 |
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